2
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
Total Total Total
Model Number
Capacitance Capacitance Capacitance Q min
C
T
(pF) at –2 V C
T
(pF) at –7 V C
T
(pF) at –10 V at –2 V Common
min max typ min max (10 MHz) Single Cathode
46 68 6.1 4.2 5.2 75 GVD1401-001 —
100 150 13.0 8.6 10.6 50 GVD1404-001 —
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
0.115 ± 0.005
2.93 ± 0.13
0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE)
(COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
500
100
50
10
5
0.5
1
2
3
45
6
10
20 30
50
REVERSE VOLTAGE
(VOLTS)
GVD1404-001
GVD1401-001
C
T
(pF)
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@spraguegoodman.com
VARACTOR DIODES SG-950
3
SUPER HYPERABRUPT TUNING VARACTOR DIODES
• Low voltage wireless phase locked loop VCOs
• Phase shifters
SPECIFICATIONS
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004/ 0.1.
Capacitance Capacitance
Model Number
Total
Ratio Ratio
Capacitance
C
T
at –1 V C
T
at –1 V
Q min
C
T
(pF) at –1 V C
T
at –3 V C
T
at –6 V
at –4 V
Common
min max
min max min max
(50 MHz) Single Cathode
3.00 3.60 1.4 1.9 2.6 3.3 1500 GVD20433-001 GVD20433-004
5.85 7.15 1.6 2.0 2.8 3.4 1200 GVD20434-001 GVD20434-004
10.35 12.65 1.6 2.0 2.9 3.4 1000 GVD20435-001 GVD20435-004
15.50 18.50 1.6 2.0 3.0 3.5 900 GVD20436-001 GVD20436-004
45.00 54.00 1.6 2.0 3.0 3.5 750 GVD20437-001 ---
FEATURES
• Mesa epitaxial silicon construction
• Silicon dioxide passivated
• Superior mid range linear characteristics
• High tuning ratios
• High Q
• Available in common cathode Style
• Available in chip form (add suffix -000)
APPLICATIONS
• TCXOs, VCXOs
• Low voltage wireless open loop VCOs
0.115 ± 0.005
2.93 ± 0.13
0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.075 ± 0.005
1.91 ± 0.13
0.091 ± 0.008
2.3 ± 0.2
0.021 ± 0.003
0.53 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TOP VIEW
(SINGLE)
(COMMON CATHODE)
0.035
0.90
0.031
0.80
0.079
2.0
0.037
0.95
0.037
0.95
0.016 ± 0.002
0.41 ± 0.04
TYP
TYP
1
PAD LAYOUT
2
3
12
3
TYP
TYP
100.0
10.0
5.0
1.0
0.5
0.3
1
2
3
45
6
10
20 30
50
REVERSE VOLTAGE
(VOLTS)
2.0
3.0
0.5
GVD20436-001
GVD20435-001
GVD20434-001
C
T
(pF)
50.0
