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ON Semiconductor
2SA608NG-NPA-AT 598-2SA608NG-NPA-AT
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
Time: 2023-11-25T23:41:10Z

(Standard Leadtime :) 1869

Quantity Price

1 10 100 1000 2500 Updated
* 2SA608NG-NPA-AT 4960 USD
* 2SA608NF-NPA-AT 103200 USD
* 2SA608NG-NPA-AT 0 USD
* 2SA608NG-NPA-AT 0 USD
* 2SA608KG-NP-AA 0 USD
* 2SA608KF-NP-AA 0 USD
* 2SA608G-SPA-AC 0 USD
* 2SA608NG-NPA-AT 0 USD
* 2SA608NF-NPA-AT 1401000
* 2SA608NG-NPA-AT 144000
* 2SA608NF-NPA-AT 7381 USD 3.932240 3.709660 3.499680
* 2SA608NG-NPA-AT 1847 USD 0.312541 0.294850 0.278160
* 2SA608KF-NP-AA 7500 USD 0.808992 0.763200 0.720000 0.640797
* 2SA608G-SPA-AC 17500 USD 0.201996 0.190563 0.179776 0.160000
* 2SA608KG-NP-AA 6507 USD
* 2SA608F-NP-AA 6689 USD
* 2SA608KF-NP 1 USD
* 2SA608NF-NPA-AT 8663 USD
* 2SA608S 0
* 2SA608N 0

ON Semiconductor
PNP 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
In this device, the DC current gain is 280 @ 1mA 6V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 300mV @ 10mA, 100mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Single BJT transistor is possible for the collector current to fall as low as 150mA volts at Single BJT transistors maximum.