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* 3LN01S-TL-E 0 CNY
* 3LN01M-TL-E 0 CNY
* 3LN01S-TL-E 5772252 USD
* 3LN01S-K-TL-E 48000 USD
* 3LN01SS-TL-H 74100 USD
* 3LN01C-TB-H 1866012 USD
* 3LN01M-TL-E 1803576 USD
* 3LN01SS-TL-E 1839588 USD
* 3LN01C-TB-E 2005968 USD
* 3LN01M-TL-H 24522 USD
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* 3LN01CPA-TB-E 0 USD
* 3LN01SP-AC 0 USD
* 3LN01SP-AC 0 USD
* 3LN01SP-AC 0 USD
* 3LN01CPA-TB-E 0 USD
* 3LN01CPA-TB-E 0 USD
* 3LN01SS-TL-H 0 USD
* 3LN01C-TB-H 45131
* 3LN01SS-TL-H 432000
* 3LN01S-K-TL-E 126000
* 3LN01S-TL-E 0
* 3LN01M-TL-E 9000
* 3LN01M-TL-H 123000
* 3LN01SS-TL-E 127790
* 3LN01C-TB-E 0
* 3LN01S-K-TL-E 126000 USD 0.1350 0.1283 0.1215 0.1080
* 3LN01C-TB-H 1700 USD 0.1050 0.0998 0.0945 0.0840
* 3LN01S-K-TL-E 126000
* 3LN01S-TL-E 283505 USD 0.076160 0.046667
* 3LN01M-TL-E 119142 USD 0.218428 0.206064 0.194400
* 3LN01M-TL-H 24783 USD 0.907360 0.856000 0.807547
* 3LN01SP-AC 92500 USD 0.114204 0.069978
* 3LN01M-TL-E 140147 USD
* 3LN01C-TB-H 39862 USD
* 3LN01SP-AC 5144 USD
* 3LN01M-TL-H 25183 USD
* 3LN01S-TL-E 247382 USD

ON Semiconductor
N-Channel Tape & Reel (TR) 3.7 Ω @ 80mA, 4V ±10V 7pF @ 10V 1.58nC @ 10V SC-75, SOT-416
A device's maximal input capacitance is 7pF @ 10V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 150mA, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 0.15A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 155 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 19 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 10V volts.This device reduces its overall power consumption by using drive voltage (1.5V 4V).