| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | FQD6N50CTM_F080 | 7632 | USD | ||||||
| * | FQD6N60CTM | 68064 | USD | ||||||
| * | FQD6N40TF | 7164 | USD | ||||||
| * | FQD6N40TM | 7728 | USD | ||||||
| * | FQD6N50CTF | 6080 | USD | ||||||
| * | FQD6N40CTF | 4512 | USD | ||||||
| * | FQD6N25TF | 17676 | USD | ||||||
| * | FQD6N60CTM_WS | 2256 | USD | ||||||
| * | FQD6N50CTM | 63720 | USD | ||||||
| * | FQD6N25TM | 143760 | USD | ||||||
| * | FQD6N40CTM | 39588 | USD | ||||||
| * | FQD6N50CTM | 0 | USD | ||||||
| * | FQD6N25TM | 175 | |||||||
| * | FQD6N50CTM | 178 | |||||||
| * | FQD6N40CTM | 0 | |||||||
| * | FQD6N60CTM-WS | 0 | |||||||
| * | FQD6N25TF | 0 | |||||||
| * | FQD6N40CTF | 0 | |||||||
| * | FQD6N50CTF | 0 | |||||||
| * | FQD6N40TM | 0 | |||||||
| * | FQD6N40TF | 0 | |||||||
| * | FQD6N60CTM | 0 | |||||||
| * | FQD6N50CTM_F080 | 0 | |||||||
| * | FQD6N25TM | 5000 | CNY | 2.3637 | |||||
| * | FQD6N40CTM | 0 | CNY | 4.1186 | |||||
| * | FQD6N40CTM | 47175 | USD | ||||||
| * | FQD6N50CTM | 2117 | USD | 1.402592 | 1.323200 | 1.248302 | |||
| * | FQD6N25TM | 14348 | USD | 5.513600 | 5.201509 | 4.907084 | |||
| * | FQD6N60CTM-WS | 3090 | USD | ||||||
| * | FQD6N50CTM | 2985 | USD | ||||||
| * | FQD6N60CTM | 9503 | USD | ||||||
| * | FQD6N40TM | 14827 | USD | ||||||
| * | FQD6N40CTM | 0 | |||||||
| * | FQD6N50CTM | 0 | |||||||
| * | FQD6N25TM | 0 |
FQD6N40CTM Description
ON Semiconductor's exclusive planar stripe and DMOS technology is used to make this FQD6N40CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to reduce on-state resistance, improve switching performance, and provide strong avalanche energy strength.
FQD6N40CTM Features
? RDS(on) = 1.0 (Max.) @VGS = 10 V, ID = 2.25 A @4.5 A, 400 V
? Minimal Gate Charge (Typ. 16 nC)
? Low Crss (Typ. 15 pF)
? Avalanche tested to perfection
FQD6N40CTM Applications
energy sources
ballasts for electronic lamps
adjustment of the active power factor (PFC)
