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* IRF9Z30PBF 0 CNY
* IRF9Z24SPBF 0 CNY 14.857
* IRF9Z24PBF 0 CNY
* IRF9Z34NPBF 0 CNY 7.375 6.835
* IRF9Z20PBF 0 CNY 14.185
* IRF9Z34NSPBF 0 CNY
* IRF9Z14PBF 0 CNY 9.83 9.34
* IRF9Z24NSTRLPBF 0 CNY
* IRF9Z24NPBF 0 CNY 7.22 6.86
* IRF9Z34PBF 0 CNY
* IRF9Z10PBF 0 CNY 13.04
* IRF9Z24NPBF 150 CNY 1.55375 1.49160 1.36730
* IRF9Z34NPBF 120 CNY 1.99996 1.91996 1.75996
* IRF9Z24NSPBF 60012 USD
* IRF9Z24NLPBF 2000 USD
* IRF9Z34NLPBF 15948 USD
* IRF9Z34NSTRR 19200 USD
* IRF9Z24NSTRR 24000 USD
* IRF9Z24NSTRL 7024 USD
* IRF9Z34NL 10116 USD
* IRF9Z24NL 6032 USD
* IRF9Z24NS 443256 USD
* IRF9Z34STRR 42000 USD
* IRF9Z14STRR 6224 USD
* IRF9Z14STRL 5808 USD
* IRF9Z14L 7472 USD
* IRF9Z24STRL 7696 USD
* IRF9Z34S 493452 USD
* IRF9Z30 397584 USD
* IRF9Z24STRR 19200 USD
* IRF9Z34STRL 38400 USD
* IRF9Z24S 701880 USD
* IRF9Z24 448308 USD
* IRF9Z14S 6880 USD
* IRF9Z14 48000 USD
* IRF9Z34 457008 USD
* IRF9Z34NSPBF 66420 USD
* IRF9Z34NSTRRPBF 1297728 USD
* IRF9Z34STRRPBF 7008 USD
* IRF9Z10 82692 USD
* IRF9Z24STRRPBF 115200 USD
* IRF9Z24STRLPBF 5264 USD
* IRF9Z20 13812 USD
* IRF9Z14STRLPBF 18384 USD
* IRF9Z14LPBF 34644 USD
* IRF9Z34STRLPBF 103896 USD
* IRF9Z34SPBF 61884 USD
* IRF9Z34PBF 61908 USD
* IRF9Z10PBF 76404 USD
* IRF9Z20PBF 62448 USD

Vishay Siliconix
P-Channel Tube 500mOhm @ 4A, 10V ±20V 270pF @ 25V 12nC @ 10V 60V TO-262-3 Long Leads, I2Pak, TO-262AA
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 270pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 6.7A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 10 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 500mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.