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(Standard Leadtime :) 58985

Quantity Price

1 10 100 1000 2500 Updated
* IRF9Z30PBF 0 CNY
* IRF9Z24SPBF 0 CNY 14.857
* IRF9Z24PBF 0 CNY
* IRF9Z34NPBF 0 CNY 7.375 6.835
* IRF9Z20PBF 0 CNY 14.185
* IRF9Z34NSPBF 0 CNY
* IRF9Z14PBF 0 CNY 9.83 9.34
* IRF9Z24NSTRLPBF 0 CNY
* IRF9Z24NPBF 0 CNY 7.22 6.86
* IRF9Z34PBF 0 CNY
* IRF9Z10PBF 0 CNY 13.04
* IRF9Z24NPBF 150 CNY 1.55375 1.49160 1.36730
* IRF9Z34NPBF 120 CNY 1.99996 1.91996 1.75996
* IRF9Z24NSPBF 60012 USD
* IRF9Z24NLPBF 2000 USD
* IRF9Z34NLPBF 15948 USD
* IRF9Z34NSTRR 19200 USD
* IRF9Z24NSTRR 24000 USD
* IRF9Z24NSTRL 7024 USD
* IRF9Z34NL 10116 USD
* IRF9Z24NL 6032 USD
* IRF9Z24NS 443256 USD
* IRF9Z34STRR 42000 USD
* IRF9Z14STRR 6224 USD
* IRF9Z14STRL 5808 USD
* IRF9Z14L 7472 USD
* IRF9Z24STRL 7696 USD
* IRF9Z34S 493452 USD
* IRF9Z30 397584 USD
* IRF9Z24STRR 19200 USD
* IRF9Z34STRL 38400 USD
* IRF9Z24S 701880 USD
* IRF9Z24 448308 USD
* IRF9Z14S 6880 USD
* IRF9Z14 48000 USD
* IRF9Z34 457008 USD
* IRF9Z34NSPBF 66420 USD
* IRF9Z34NSTRRPBF 1297728 USD
* IRF9Z34STRRPBF 7008 USD
* IRF9Z10 82692 USD
* IRF9Z24STRRPBF 115200 USD
* IRF9Z24STRLPBF 5264 USD
* IRF9Z20 13812 USD
* IRF9Z14STRLPBF 18384 USD
* IRF9Z14LPBF 34644 USD
* IRF9Z34STRLPBF 103896 USD
* IRF9Z34SPBF 61884 USD
* IRF9Z34PBF 61908 USD
* IRF9Z10PBF 76404 USD
* IRF9Z20PBF 62448 USD

Infineon Technologies
P-Channel Tape & Reel (TR) 175m Ω @ 7.2A, 10V ±20V 350pF @ 25V 19nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF9Z24NSTRLPBF Overview


Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 96 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -12A.With a drain-source breakdown voltage of -55V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -55V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 23 ns.Peak drain current for this device is 48A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 13 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.4V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 55V.Using drive voltage (10V) reduces this device's overall power consumption.

IRF9Z24NSTRLPBF Features


the avalanche energy rating (Eas) is 96 mJ
a continuous drain current (ID) of -12A
a drain-to-source breakdown voltage of -55V voltage
the turn-off delay time is 23 ns
based on its rated peak drain current 48A.
a threshold voltage of 4V
a 55V drain to source voltage (Vdss)


IRF9Z24NSTRLPBF Applications


There are a lot of Infineon Technologies
IRF9Z24NSTRLPBF applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification