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(Standard Leadtime :) 18924

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1 3.091028
10 2.916064
100 2.751003
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* IRF9Z34NPBF 120 CNY 1.99996 1.91996 1.75996
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* IRF9Z14STRR 6224 USD
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* IRF9Z24STRL 7696 USD
* IRF9Z34S 493452 USD
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* IRF9Z24STRR 19200 USD
* IRF9Z34STRL 38400 USD
* IRF9Z24S 701880 USD
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* IRF9Z14S 6880 USD
* IRF9Z14 48000 USD
* IRF9Z34 457008 USD
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* IRF9Z34STRRPBF 7008 USD
* IRF9Z10 82692 USD
* IRF9Z24STRRPBF 115200 USD
* IRF9Z24STRLPBF 5264 USD
* IRF9Z20 13812 USD
* IRF9Z14STRLPBF 18384 USD
* IRF9Z14LPBF 34644 USD
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* IRF9Z34SPBF 61884 USD
* IRF9Z34PBF 61908 USD
* IRF9Z10PBF 76404 USD
* IRF9Z20PBF 62448 USD

Vishay Siliconix
P-Channel Tape & Reel (TR) 280mOhm @ 6.6A, 10V ±20V 570pF @ 25V 19nC @ 10V 60V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 570pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -11A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-60V. And this device has -60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 15 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 280mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.