| 1 | 10 | 100 | 1000 | 2500 | Updated | ||||
|---|---|---|---|---|---|---|---|---|---|
| * | IRFB5620PBF | 0 | CNY | ||||||
| * | IRFB5615PBF | 0 | CNY | 15.734 | |||||
| * | IRFB5615PBF | 20 | CNY | 5.14150 | 4.74600 | ||||
| * | IRFB5620 | 0 | CNY | 17.15939 | 15.83944 | 14.51948 | |||
| * | IRFB5620PBF | 37392 | USD | ||||||
| * | IRFB52N15DPBF | 14652 | USD | ||||||
| * | IRFB5615PBF | 24192 | USD | ||||||
| * | IRFB59N10DPBF | 84456 | USD | ||||||
| * | IRFB52N15DPBF | 16934 | |||||||
| * | IRFB5615PBF | 0 | |||||||
| * | IRFB5620PBF | 0 | |||||||
| * | IRFB59N10DPBF | 0 | |||||||
| * | IRFB52N15DPBF | 1932 | CNY | 20.1992 | 17.4056 | 16.1879 | |||
| * | IRFB5615PBF | 0 | CNY | ||||||
| * | IRFB5615PBF | 0 | CNY | ||||||
| * | IRFB5620PBF | 0 | CNY | 12.0764 | |||||
| * | IRFB5620PBF | 0 | CNY | ||||||
| * | IRFB5620PBF | 290 | USD | 2.061 | |||||
| * | IRFB52N15DPBF | 1100 | USD | 2.1742 | |||||
| * | IRFB5615PBF | 1169 | USD | ||||||
| * | IRFB59N10DPBF-VB | 41 | USD | 1.176120 | 1.109547 | 1.046743 | |||
| * | IRFB59N10D-VB | 17 | USD | 1.225680 | 1.156302 | 1.090851 | |||
| * | IRFB59N10D-VB | 17 | USD | 1.225680 | 1.156302 | 1.090851 | |||
| * | IRFB52N15DPBF | 47125 | USD | 2.873024 | 2.710400 | 2.556981 | |||
| * | IRFB59N10DPBF | 55022 | USD | 2.873024 | 2.710400 | 2.556981 | |||
| * | IRFB5615PBF | 108112 | USD | 0.969264 | 0.914400 | 0.862642 | |||
| * | IRFB5620PBF | 2411 | USD | ||||||
| * | IRFB59N10DPBF-VB | 5360 | USD | ||||||
| * | IRFB5620PBF | 264747 | USD | ||||||
| * | IRFB59N10D-VB | 13216 | USD | ||||||
| * | IRFB5615PBF | 16635 | USD | ||||||
| * | IRFB52N15DPBF | 15846 | USD | ||||||
| * | IRFB59N10DPBF | 39829 | USD | ||||||
| * | IRFB52N15DPBF | 0 | |||||||
| * | IRFB5615PBF | 0 | |||||||
| * | IRFB5620PBF | 0 |
Infineon 的分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 N 通道设备，外形可应对几乎任何板布局和热设计挑战。 在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。
Infineon 提供庞大且全面的 MOSFET 设备组合，其中包括 CoolMOS、OptiMOS 和 StrongIRFET 系列。它们提供同类最佳性能，实现更高效率、功率密度和成本效益。需要高质量和增强型保护功能的设计获益于符合 AEC-Q101 汽车工业标准的 MOSFET。
