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Micro Commercial Co
MMST5551-TP 1603-MMST5551-TP
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
Time: 2023-12-22T23:51:16Z

(Standard Leadtime :) 3329

Quantity Price
1 0.403224
10 0.380400
100 0.358868
500 0.338555
1000 0.319391

1 10 100 1000 2500 Updated
* MMST5401-7-F 0 CNY
* MMST5551-7-F 0 CNY
* MMST5401-7 7568 USD
* MMST5088T146 3136 USD
* MMST5086T146 3936 USD
* MMST5401-TP 5056 USD
* MMST5551-TP 6768 USD
* MMST5551-7 6288 USD
* MMST5401-7-F 290052 USD
* MMST5551-7-F 36000 USD
* MMST5551-TP 3000 CNY 0
* MMST5401-7-F 119886
* MMST5551-7-F 32267
* MMST5551-TP 944
* MMST5401-TP 0
* MMST5401Q-7-F 0
* MMST5551Q-7-F 0
* MMST5401-7 0
* MMST5086T146 0
* MMST5088T146 0
* MMST5551-7 1160
* MMST5551-7-F 0 CNY 0.27313 0.25212 0.23111
* MMST5551-TP 546000 CNY
* MMST5401-7-F 69000 CNY
* MMST5086T146 0 CNY
* MMST5551-7-F 0 CNY
* MMST5401-7-F 5039 USD 0.0692
* MMST5551-TP 144000 USD
* MMST5551-7-F 56168 USD 0.0614
* MMST5401-7-F 3 USD 0.169440 0.159849 0.150801
* MMST5551-7-F 1199 USD 0.093480 0.057279
* MMST5551-7 1160 USD 0.380000 0.358491 0.338199
* MMST5551-TP 4306 USD
* MMST5401-TP 2603 USD
* MMST5551Q-7-F 2946 USD 0.311000 0.293396 0.276789
* MMST5401-7 12519 USD 0.043194 0.026467
* MMST5088T146 6795 USD 0.866317 0.817280 0.771019
* MMST5401Q-7-F 5923 USD 0.286000 0.269811 0.254539
* MMST5086T146 11988 USD
* MMST5088T146 5060 USD 0.901509 0.850480 0.802340
* MMST5551-7-F 7498 USD 0.300300 0.283302 0.267266
* MMST5401-7-F 3 USD 0.292600 0.276038 0.260413
* MMST5401-7-F 0
* MMST5401-TP 0
* MMST5551-7-F 0
* MMST5551-TP 0
* MMST5401 0
* MMST5551 0

Micro Commercial Co
NPN -55°C~150°C TJ 50nA 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
In this device, the DC current gain is 80 @ 10mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 5mA, 50mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.There is a 160V maximal voltage in the device due to collector-emitter breakdown.