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(Standard Leadtime :) 17306

Quantity Price
1 2.512209
10 2.370009
100 2.235857
500 2.109300
1000 1.989905

1 10 100 1000 2500 Updated
* SI7445DP-T1-GE3 5504 USD
* SI7445DP-T1-E3 3776 USD
* SI7440DP-T1-E3 135300 USD
* SI7448DP-T1-GE3 6576 USD
* SI7447ADP-T1-GE3 3584 USD
* SI7447ADP-T1-E3 26208 USD
* SI7446BDP-T1-GE3 2832 USD
* SI7446BDP-T1-E3 13980 USD
* SI7440DP-T1-GE3 6464 USD
* SI7448DP-T1-E3 15564 USD
* SI7448DP-T1-E3 0
* SI7440DP-T1-E3 0
* SI7440DP-T1-GE3 0
* SI7445DP-T1-E3 0
* SI7445DP-T1-GE3 0
* SI7446BDP-T1-E3 0
* SI7446BDP-T1-GE3 0
* SI7447ADP-T1-E3 0
* SI7447ADP-T1-GE3 0
* SI7448DP-T1-GE3 0
* SI7440DP-T1-E3 0
* SI7440DP-T1-GE3 0
* SI7445DP-T1-E3 0
* SI7445DP-T1-GE3 0
* SI7446BDP-T1-E3 0
* SI7440DP-T1-E3 2708 USD 1.682432 1.587200 1.497358
* SI7446DP 358 USD 1.590000 1.500000 1.415094 1.259429

Vishay Siliconix
P-Channel Tape & Reel (TR) 7.7mOhm @ 19A, 4.5V ±8V 140nC @ 5V 20V PowerPAK® 1212-8
This device conducts a continuous drain current (ID) of -19A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 400 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 7.7mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 40 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 8V.Activation of any electrical operation happens at threshold voltage, and this transistor has -1V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 20V.In order to reduce power consumption, this device uses a drive voltage of 1.8V 4.5V volts (1.8V 4.5V).