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(Standard Leadtime :) 3469

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Vishay Siliconix
N-Channel Tape & Reel (TR) 240m Ω @ 2.8A, 10V ±20V 18nC @ 10V PowerPAK® SO-8
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 0.45 mJ.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 2.8A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 8A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 10 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (6V 10V), this device helps reduce its power consumption.