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(Standard Leadtime :) 2609

Quantity Price

1 10 100 1000 2500 Updated
* SUD50P08-25L-E3 0 CNY 21.982
* SUD50P04-08-GE3 0 CNY
* SUD50N04-8M8P-4GE3 0 CNY 12.783 11.848
* SUD50P06-15-GE3 0 CNY
* SUD50P10-43L-E3 1898 CNY 10.88435 10.48123 9.27186
* SUD50P10-43L-GE3 20 CNY 9.43000 9.02000
* SUD50P04-08-GE3 0 CNY 6.21811 5.98781 5.29690
* SUD50NP04-77P-T4E3 6792 USD
* SUD50N03-12P-GE3 3328 USD
* SUD50N02-09P-GE3 6160 USD
* SUD50N03-06AP-T4E3 2624 USD
* SUD50P04-13L-E3 22644 USD
* SUD50N06-07L-E3 60000 USD
* SUD50P10-43-E3 4480 USD
* SUD50P08-26-E3 4288 USD
* SUD50P04-40P-T4-E3 2832 USD
* SUD50P04-23-GE3 21600 USD
* SUD50P04-23-E3 86124 USD
* SUD50N10-34P-T4-E3 29400 USD
* SUD50N10-18P-E3 6160 USD
* SUD50N04-37P-T4-E3 2512 USD
* SUD50N04-16P-E3 90000 USD
* SUD50N04-05L-E3 78924 USD
* SUD50N03-16P-GE3 6976 USD
* SUD50N03-16P-E3 4784 USD
* SUD50N03-12P-E3 127572 USD
* SUD50N03-11-E3 126396 USD
* SUD50N03-06P-E3 123672 USD
* SUD50N025-06P-E3 41520 USD
* SUD50P04-13L-GE3 510012 USD
* SUD50N10-18P-GE3 3888 USD
* SUD50N06-07L-GE3 7984 USD
* SUD50N02-09P-E3 122160 USD
* SUD50N02-04P-E3 455484 USD
* SUD50N06-08H-E3 6208 USD
* SUD50P06-15L-T4-E3 6432 USD
* SUD50P10-43L-GE3 390000 USD
* SUD50N04-09H-E3 7424 USD
* SUD50N03-09P-GE3 62988 USD
* SUD50N024-09P-E3 6704 USD
* SUD50P06-15L-E3 24900 USD
* SUD50P04-08-GE3 390000 USD
* SUD50P04-09L-E3 63264 USD
* SUD50P10-43L-E3 135840 USD
* SUD50N02-06P-E3 214800 USD
* SUD50N03-06AP-E3 6128 USD
* SUD50N03-09P-E3 18096 USD
* SUD50P04-15-E3 129060 USD
* SUD50N06-09L-E3 60264 USD
* SUD50P08-25L-E3 450000 USD

Vishay Siliconix
N-Channel Tape & Reel (TR) 8.8m Ω @ 20A, 10V ±20V 2400pF @ 20V 56nC @ 10V 40V TO-252-3, DPak (2 Leads + Tab), SC-63

SUD50N04-8M8P-4GE3 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The maximum input capacitance of this device is 2400pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 14A.As shown in the table below, the drain current of this device is 50A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 45 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 30 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 1.5V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SUD50N04-8M8P-4GE3 Features


the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 14A
the turn-off delay time is 45 ns
a threshold voltage of 1.5V
a 40V drain to source voltage (Vdss)


SUD50N04-8M8P-4GE3 Applications


There are a lot of Vishay Siliconix
SUD50N04-8M8P-4GE3 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,