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(Standard Leadtime :) 17548

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* TIP49 7472 USD 0.300226 0.283232 0.267200

Central Semiconductor Corp
NPN -65°C~150°C TJ 1mA 1 Elements 3 Terminations SILICON NPN TO-220-3 Bulk Through Hole
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 30 @ 300mA 10V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 1V @ 200mA, 1A.A transition frequency of 10MHz is present in the part.Collector current can be as low as 1A volts at its maximum.