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Wolfspeed
CGHV40100F 941-CGHV40100F
RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt
Time: 2022-03-08T12:57:07Z

(Standard Leadtime :<!-- The first line will be the total with expand link (if we have pending shipments) or the first shipment--> <div id="onOrderLine0" class="onOrderLine"> <div class="col-xs-3 onOrderQuantity">291</div> <div class="col-xs-9 onOrderDate">Expected 4/22/2022</div> </div> <!-- The second line will be the remaining total with expand link (if no pending and more than 2 shipments or the second shipment (if no pending)--> <div id="onOrderLine1" class="showOnOrder"> <div class="col-xs-3 onOrderQuantity">70</div> <div class="col-xs-9 onOrderDate">Expected 7/18/2022</div> </div> <!-- These are the hidden lines -->) 57

Quantity Price
1 263.55 263.55

1 10 100 1000 2500 Updated
* CGHV40320D 5264 USD
* CGHV40050F 7920 USD
* CGHV40030F 6928 USD
* CGHV40100P 6948 USD
* CGHV40100F 14844 USD
* CGHV40200PP-TB 8478 USD
* CGHV40100P-TB 3420 USD
* CGHV40030-TB 6732 USD
* CGHV40050F-TB 7308 USD
* CGHV40320D-GP4 0 CNY 0
* CGHV40200PP 0 CNY 0
* CGHV40180F 0 CNY 0
* CGHV40100P 0 CNY 0
* CGHV40100F 0 CNY 0
* CGHV40050F 0 CNY 0
* CGHV40030P 0 CNY 0
* CGHV40030F 0 CNY 0
* CGHV40200PP 44 USD 328.80
* CGHV40320D-GP4 40 USD 255.57
* CGHV40180F 11 USD 302.05
* CGHV40030F 85 USD 119.29
* CGHV40030P 0 USD 119.29
* CGHV40100P 0 USD 263.55
* CGHV40050F 175
* CGHV40180F 119
* CGHV40030F 194
* CGHV40100P 57
* CGHV40100F 10
* CGHV40200PP 0
* CGHV40180F-AMP3 0
* CGHV40200PP-AMP1 0
* CGHV40030P 0
* CGHV40050P 0
* CGHV40050P 0
* CGHV40180P 0
* CGHV40100F-TB 4158 USD
* CGHV40030F-AMP2 0 USD 1468.45000
* CGHV40100P-AMP 1 USD 955.49000
* CGHV40100F-AMP 0 USD 955.49000
* CGHV40200PP-AMP 1 USD 1019.31000
* CGHV40050F-AMP 0 USD 793.73000
* CGHV40200PP-TB 1 USD 550.00000
* CGHV40100F-TB 0 USD
* CGHV40030-TB 0 USD
* CGHV40050F-TB 0 USD
* CGHV40100P-TB 1 USD
* CGHV40030F 929 USD
* CGHV40180F 33 USD
* CGHV40320D-GP4 20 USD

Wolfspeed
RF JFET Transistors GaN HEMT DC-4.0GHz, 100 Watt

Wolfspeed GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offer high efficiency; high gain and wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN has superior properties compared to Silicon or Gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.