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Quantity Price

1 10 100 1000 2500 Updated
* IRF9952TRPBF 0 CNY 6.16
* IRF9910TRPBF 0 CNY 9.161 8.886
* IRF9956TRPBF 0 CNY
* IRF9952TRPBF 0 CNY 1.41748 1.36498 1.20748
* IRF9910 28860 USD
* IRF9910TR 5296 USD
* IRF9956PBF 3248 USD
* IRF9953PBF 4320 USD
* IRF9952PBF 2160 USD
* IRF9910PBF 5952 USD
* IRF9956TR 105600 USD
* IRF9953TR 346992 USD
* IRF9952TR 1389672 USD
* IRF9956 189156 USD
* IRF9953 231708 USD
* IRF9952 557988 USD
* IRF9956TRPBF 568848 USD
* IRF9910TRPBF 543600 USD
* IRF9953TRPBF 518340 USD
* IRF9952TRPBF 963480 USD
* IRF9953TRP 0 USD
* IRF9953TRPBF 0 USD
* IRF9910TRPBF 0 CNY
* IRF9910TRPBF 0 CNY
* IRF9910TRPBF 0 CNY
* IRF9952TRPBF 0 CNY
* IRF9952TRPBF 0 CNY
* IRF9953TRPBF 0 CNY
* IRF9953TRPBF 0 CNY
* IRF9953TRPBF 1533
* IRF9952TRPBF 7331 0.82000 0.71500 0.49500 0.35196
* IRF9910TRPBF 0 1.17000
* IRF9952QPBF 0
* IRF9956TRPBF 0
* IRF9952 0
* IRF9953 0
* IRF9956 0
* IRF9952TR 0
* IRF9953TR 0
* IRF9956TR 0
* IRF9910TR 0
* IRF9910 0
* IRF9952PBF 0
* IRF9953PBF 0
* IRF9956PBF 0
* IRF9952QTRPBF 0
* IRF9910TRPBF-1 0
* IRF9953TRPBF 28000 USD
* IRF9952TRPBF 17803 USD 0.5546 0.38

TYPEDESCRIPTION
MfrInfineon Technologies
SeriesHEXFET®
PackageTube
Product StatusDiscontinued at
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C10A, 12A
Rds On (Max) @ Id, Vgs13.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.55V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power - Max2W
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
Supplier Device Package8-SO
Base Product NumberIRF99


Infineon Technologies
MOSFET 2N-CH 20V 10A/12A 8-SOIC
Mosfet Array 20V 10A, 12A 2W Surface Mount 8-SO