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0

Quantity Price
10 9.161
1000 8.886
2000 8.621

1 10 100 1000 2500 Updated
* IRF9952TRPBF 0 CNY 6.16
* IRF9956TRPBF 0 CNY
* IRF9952TRPBF 0 CNY 1.41748 1.36498 1.20748
* IRF9910 28860 USD
* IRF9910TR 5296 USD
* IRF9956PBF 3248 USD
* IRF9953PBF 4320 USD
* IRF9952PBF 2160 USD
* IRF9910PBF 5952 USD
* IRF9956TR 105600 USD
* IRF9953TR 346992 USD
* IRF9952TR 1389672 USD
* IRF9956 189156 USD
* IRF9953 231708 USD
* IRF9952 557988 USD
* IRF9956TRPBF 568848 USD
* IRF9910TRPBF 543600 USD
* IRF9953TRPBF 518340 USD
* IRF9952TRPBF 963480 USD
* IRF9953TRP 0 USD
* IRF9953TRPBF 0 USD
* IRF9910TRPBF 0 CNY
* IRF9910TRPBF 0 CNY
* IRF9910TRPBF 0 CNY
* IRF9952TRPBF 0 CNY
* IRF9952TRPBF 0 CNY
* IRF9953TRPBF 0 CNY
* IRF9953TRPBF 0 CNY
* IRF9953TRPBF 1533
* IRF9952TRPBF 7331 0.82000 0.71500 0.49500 0.35196
* IRF9910TRPBF 0 1.17000
* IRF9952QPBF 0
* IRF9956TRPBF 0
* IRF9952 0
* IRF9953 0
* IRF9956 0
* IRF9952TR 0
* IRF9953TR 0
* IRF9956TR 0
* IRF9910TR 0
* IRF9910 0
* IRF9910PBF 0
* IRF9952PBF 0
* IRF9953PBF 0
* IRF9956PBF 0
* IRF9952QTRPBF 0
* IRF9910TRPBF-1 0
* IRF9953TRPBF 28000 USD
* IRF9952TRPBF 17803 USD 0.5546 0.38

20V 双 N 沟道 HEXFET 功率 MOSFET,采用 SO-8 封装

4.5V VGS 时低 RDS(接通)
极低栅极电荷
完全雪崩电压和电流特征
双 N 沟道 MOSFET

Infineon
英飞凌 NMOS, MOSFET, IRF9910系列, Vds=20 V, SO封装, 12 A, 表面贴装, 8引脚