IRF9910TRPBF Description

Fifth Generation HEXFETs from International Rectifier have extraordinarily low on-resistance per silicon area thanks to cutting-edge manufacturing methods. This feature, along with the rapid switching speed and ruggedized device architecture that HEXFET Power MOSFETs are known for, provides the designe with an incredibly efficient and reliable device for usage in a number of applications. The SO-8's improved thermal properties and multiple-die capacity make it the perfect choice for a variety of power applications. This adjustment was possible because to the usage of a leadframe that was custom made. With this invention, multiple devices can be used while substantially less board area is needed. The package is designed for use with wave soldering or vapor phase infrared technologies.

IRF9910TRPBF Features

• 4.5V VGS with Very Low RDS(on)

• Gate Fee is Minimal

• Voltage and Current of Fully Characterized Avalanches

• Gate Rating Maximum 20V VGS

IRF9910TRPBF Applications

• Dual SO-8 MOSFET for POL converters in desktop, servers, graphics cards, gaming consoles, and set-top box

• free of lead